View BTS5234G_840285.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

data sheet, v1.0, january 2004 never stop thinking. bts 5234g smart high-side power switch profet two channels, 60 m ? automotive power
smart high-side power switch bts 5234g table of contents page data sheet 2 v1.0, 2004-01-23 product summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 1overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 1.1 block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 1.2 terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6 2 pin configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 2.1 pin assignment bts 5234g . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 2.2 pin definitions and functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 3 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 3.1 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 4 block description and electrical characteristics . . . . . . . . . . . . . . . . . . . . . . .10 4.1 power stages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 4.1.1 output on-state resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.1.2 input circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.1.3 inductive output clamp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 4.1.4 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 4.2 protection functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 4.2.1 over load protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 4.2.2 reverse polarity protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 4.2.3 over voltage protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 4.2.4 loss of ground protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 4.2.5 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 4.3 diagnosis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18 4.3.1 on-state diagnosis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 4.3.2 off-state diagnosis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 4.3.3 sense enable function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 4.3.4 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 5 package outlines bts 5234g . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .24 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .25
data sheet 3 v1.0, 2004-01-23 type ordering code package bts 5234g q67060-s6156 p-dso-20-21 smart high-side power switch profet bts 5234g product summary the bts 5234g is a dual channel high-side power switch in p-dso-20-21 package providing embedded protective functions. the power transistor is built by a n-channel vertical power mosfet with charge pump. the device is monolithically integrated in smart sipmos technology. basic features ? very low standby current 3.3 v and 5 v compatible logic pins improved electromagnetic compatibility (emc) stable behavior at under voltage logic ground independent from load ground secure load turn-off while logic ground disconnected optimized inverse current capability operating voltage v bb(on) 4.5..28v over voltage protection v bb(az) 41 v on-state resistance r ds(on) 60 m ? nominal load current (one channel active) i l(nom) 3.3 a current limitation i l(lim) 23 a current limitation repetitive i l(scr) 6a standby current for whole device with load i bb(off) 2.5 a p-dso-20-21
smart high-side power switch bts 5234g data sheet 4 v1.0, 2004-01-23 protective functions reverse battery protection without external components short circuit protection overload protection multi-step current limitation thermal shutdown with restart thermal restart at reduced current limitation over voltage protection without external resistor loss of ground protection electrostatic discharge protection (esd) diagnostic functions enhanced intellisense signal for each channel enable function for diagnosis pins (is1 and is2) proportional load current sense signal by current source high accuracy of current sense signal at wide load current range open load detection in on-state by load current sense open load detection in off-state by voltage source feedback on over temperature and current limitation in on-state applications c compatible high-side power switch with diagnostic feedback for 12 v grounded loads all types of resistive, inductive and capacitive loads suitable for loads with high inrush currents, so as lamps suitable for loads with low currents, so as leds replaces electromechanical relays, fuses and discrete circuits
smart high-side power switch bts 5234g overview data sheet 5 v1.0, 2004-01-23 1overview the bts 5234g is a dual channel high-side power switch (two times 60 m ? ) in p-dso-20-21 package providing embedded protective functions. the enhanced intellisense pins is1 and is2 provide a sophisticated diagnostic feedback signal including current sense function and open load in off state. the diagnosis signals can be switched on and off by the sense enable pin sen. an integrated ground resistor as well as integrated resistors at each input pin (in1, in2, sen) reduce external components to a minimum. the power transistor is built by a n-channel vertical power mosfet with charge pump. the inputs are ground referenced cmos compatible. the device is monolithically integrated in smart sipmos technology. 1.1 block diagram figure 1 block diagram channel 1 internal power supply esd protection out2 channel 2 control and protection circuit equivalent to channel 1 in1 is1 sen gnd r gnd is2 in2 open load detection logic gate contr ol & charge pump vbb out1 clamp for inductive load multi step load cur rent limitation load current sense tem per atur e sensor
smart high-side power switch bts 5234g overview data sheet 6 v1.0, 2004-01-23 1.2 terms following figure shows all terms used in this data sheet. figure 2 terms ter m s 2c h. em f i in1 v in1 out1 i in2 v in2 v is1 i is1 v is2 i is2 v bb v sen i sen i l1 v out2 v out1 v ds2 v ds1 i l2 gnd i gnd i bb in1 in2 is1 is2 sen vbb out2 bts 5234g
smart high-side power switch bts 5234g pin configuration data sheet 7 v1.0, 2004-01-23 2 pin configuration 2.1 pin assignment bts 5234g figure 3 pin configuration p-dso-20-21 2.2 pin definitions and functions pin symbol i/o od function 4 in1 i input signal for channel 1 7 in2 i input signal for channel 2 5 is1 o diagnosis output signal channel 1 6 is2 o diagnosis output signal channel 2 8 sen i sense enable input for channel 1&2 17, 18 ,19 out1 o protected high-side power output channel 1 12, 13, 14 out2 o protected high-side power output channel 2 3 gnd - ground connection 1, 10, 11, 20 vbb - positive power supply for logic supply as well as output power supply 2, 9 nc - not connected (top view) out1 out1 out1 vbb vbb vbb 20 19 18 17 16 15 gnd in1 is1 is2 vbb in2 1 2 3 4 5 6 nc nc vbb sen 7 8 9 10 14 13 12 11 out2 out2 out2 vbb
smart high-side power switch bts 5234g electrical characteristics data sheet 8 v1.0, 2004-01-23 3 electrical characteristics 3.1 maximum ratings stresses above the ones listed here may affect device reliability or may cause permanent damage to the device. unless otherwise specified: t j = 25 c pos. parameter symbol limit values unit test conditions min. max. supply voltage 3.1.1 supply voltage v bb -16 28 v 3.1.2 supply voltage for full short circuit protection (single pulse) ( t j(0) = -40c .. 150c) v bb(sc) 028v l = 8 h, r = 0.2 ? 1) 3.1.3 voltage at power transistor v ds -52v 3.1.4 supply voltage for load dump protection v bb(ld) 41 v r i = 2 ? 2) r l = 6.8 ? power stages 3.1.5 load current i l - i l(lim) a- 3) 3.1.6 maximum energy dissipation single pulse e as -0.58j i l(0) = 2 a 4) t j(0) = 150c 3.1.7 power dissipation (dc) p tot -1.4w t a = 85 c 5) t j 150 c logic pins 3.1.8 voltage at input pin v in -5 -16 10 v t 2min 3.1.9 current through input pin i in -2.0 -8.0 2.0 ma t 2min 3.1.10 voltage at sense enable pin v sen -5 -16 10 v t 2min 3.1.11 current through sense enable pin i sen -2.0 -8.0 2.0 ma t 2min 3.1.12 current through sense pin i is -25 10 ma
smart high-side power switch bts 5234g electrical characteristics data sheet 9 v1.0, 2004-01-23 temperatures 3.1.13 junction temperature t j -40 150 c 3.1.14 dynamic temperature increase while switching ? t j -60c 3.1.15 storage temperature t stg -55 150 c esd susceptibility 3.1.16 esd susceptibility hbm in, sen is out v esd -1 -2 -4 1 2 4 kv according to eia/jesd 22-a 114b 1) r and l describe the complete circuit impedance including line, contact and generator impedances 2) load dump is specified in iso 7636, r i is the internal resistance of the load dump pulse generator 3) current limitation is a protection feature. operation in current limitation is considered as ?outside? normal operating range. protection features are not designed for continuous repetitive operation. 4) pulse shape represents inductive switch off: i l (t) = i l (0) * (1 - t / t peak ); 0 < t < t peak 5) device mounted on pcb (50 mm x 50 mm x 1.5mm epoxy, fr4) with 6 cm 2 copper heatsinking area (one layer, 70 m thick) for v bb connection. pcb is vertical without blown air. unless otherwise specified: t j = 25 c pos. parameter symbol limit values unit test conditions min. max.
smart high-side power switch bts 5234g block description and electrical characteristics data sheet 10 v1.0, 2004-01-23 4 block description and electrical characteristics 4.1 power stages the power stages are built by a n-channel vertical power mosfet (dmos) with charge pump. 4.1.1 output on-state resistance the on-state resistance r ds(on) depends on the supply voltage as well as the junction temperature t j . figure 4 shows that dependencies for the typical on-state resistance. the behavior in reverse polarity mode is described in section 4.2.2 . figure 4 typical on-state resistance 4.1.2 input circuit figure 5 shows the input circuit of the bts 5234g. there is an integrated input resistor that makes external components obsolete. the current sink to ground ensures that the device switches off in case of open input pin. the zener diode protects the input circuit against esd pulses. figure 5 input circuit (in1 and in2) 30 40 50 60 70 80 90 -50 -25 0 25 50 75 100 125 150 r ds(on) /m ? t / c 40 60 80 100 120 140 160 0 5 10 15 20 25 r ds(on) /m ? v bb /v v bb = 13.5 v t j = 25c in r in i in gnd r gnd input.emf
smart high-side power switch bts 5234g block description and electrical characteristics data sheet 11 v1.0, 2004-01-23 a high signal at the input pin causes the power dmos to switch on with a dedicated slope, which is optimized in terms of emc emission. figure 6 switching a load (resistive) 4.1.3 inductive output clamp when switching off inductive loads with high-side switches, the voltage v out drops below ground potential, because the inductance intends to continue driving the current. figure 7 output clamp (out1 and out2) to prevent destruction of the device, there is a voltage clamp mechanism implemented that keeps that negative output voltage at a certain level (v out(cl) ). see figure 7 and figure 8 for details. nevertheless, the maximum allowed load inductance is limited. in v out t switchon.emf t on t off t 90% 10% 70% d v /d t on 30% 70% d v /d t off 30% out putclamp. emf out gnd v bb vbb l , r l v out i l
smart high-side power switch bts 5234g block description and electrical characteristics data sheet 12 v1.0, 2004-01-23 figure 8 switching an inductance maximum load inductance while demagnetization of inductive loads, energy has to be dissipated in the bts 5234g. this energy can be calculated with following equation: following equation simplifies under the assumption of r l = 0: the energy, which is converted into heat, is limited by the thermal design of the component. see figure 9 for the maximum allowed energy dissipation. figure 9 maximum energy dissipation single pulse, t j,start = 150c v out i nduct iveload. emf t i l t v out(cl) v bb in = 5v in = 0v 0 ev bb v out(cl) + () v out(cl) r l ------------------------- - ln ? 1 r l i l ? v out(cl) ------------------------- - + ?? ?? ?? i l + l r l ------ ?? = e 1 2 -- - li l 2 1 v bb v out(cl) ------------------------- - + ?? ?? ?? ? = 0.04 0.05 0.1 0.2 0.3 0.4 0.5 0.6 2 3 4 5 6 7 8 9 10 e as /j i /a v bb = 12 v
smart high-side power switch bts 5234g block description and electrical characteristics data sheet 13 v1.0, 2004-01-23 4.1.4 electrical characteristics unless otherwise specified: v bb = 9 v to 16 v, t j = -40 c to +150 c, typical values: v bb = 13.5 v, t j = 25 c pos. parameter symbol limit values unit test conditions min. typ. max. general 4.1.1 operating voltage v bb 4.5 28 v v in = 4.5 v r l = 12 ? v ds < 0.5 v 4.1.2 operating current one channel active all channels active i gnd 1.8 3.6 4 8 ma v in = 5 v 4.1.3 standby current for whole device with load i bb(off) 1.5 2.5 2.5 15 a v in = 0 v v sen = 0 v t j = 25c t j = 85c 1) t j = 150c output characteristics 4.1.4 on-state resistance per channel r ds(on) 45 90 60 115 m ? i l = 2.5 a t j = 25 c t j = 150 c 4.1.5 output voltage drop limitation at small load currents v ds(nl) 40 mv i l < 0.25 a 4.1.6 nominal load current per channel one channel active two channels active i l(nom) 3.3 2.5 a t a = 85 c t j 150 c 2) 3) 4.1.7 output clamp v out(cl) -16 -13 -10 v i l = 40 ma 4.1.8 output leakage current per channel i l(off) 0.1 6 a v in = 0 v 4.1.9 inverse current capability -i l(inv) 3a 1)
smart high-side power switch bts 5234g block description and electrical characteristics data sheet 14 v1.0, 2004-01-23 note: characteristics show the deviation of parameter at the given supply voltage and junction temperature. typical values show the typical parameters expected from manufacturing. thermal resistance 4.1.10 junction to case r thjc -35k/w- 1) 4.1.11 junction to ambient one channel active all channels active r thja - - 48 45 k/w - 1)2) input characteristics 4.1.12 input resistor r in 1.8 3.5 5.5 k ? 4.1.13 l-input level v in(l) -0.3 1.0 v 4.1.14 h-input level v in(h) 2.5 5.7 v 4.1.15 l-input current i in(l) 31875a v in = 0.4 v 4.1.16 h-input current i in(h) 10 38 75 a v in = 5 v timings 4.1.17 turn-on time to 90% v bb t on 100 250 s r l = 12 ? v bb = 13.5 v 4.1.18 turn-off time to 10% v bb t off 120 250 s r l = 12 ? v bb = 13.5 v 4.1.19 slew rate 30% to 70% v bb d v / d t on 0.1 0.25 0.5 v/s r l = 12 ? v bb = 13.5 v 4.1.20 slew rate 70% to 30% v bb -d v / d t off 0.1 0.25 0.5 v/s r l = 12 ? v bb = 13.5 v 1) not subject to production test, specified by design 2) device mounted on pcb (50 mm x 50 mm x 1.5mm epoxy, fr4) with 6 cm 2 copper heatsinking area (one layer, 70 m thick) for v bb connection. pcb is vertical without blown air. 3) not subject to production test, parameters are calculated from r ds(on) and r th unless otherwise specified: v bb = 9 v to 16 v, t j = -40 c to +150 c, typical values: v bb = 13.5 v, t j = 25 c pos. parameter symbol limit values unit test conditions min. typ. max.
smart high-side power switch bts 5234g data sheet 15 v1.0, 2004-01-23 4.2 protection functions the device provides embedded protective functions. integrated protection functions are designed to prevent ic destruction under fault conditions described in the data sheet. fault conditions are considered as ?outside? normal operating range. protection functions are neither designed for continuous nor repetitive operation. 4.2.1 over load protection the load current i out is limited by the device itself in case of over load or short circuit to ground. there are three steps of current limitation which are selected automatically depending on the voltage v ds across the power dmos. please note that the voltage at the out pin is v bb - v ds . please refer to following figure for details. figure 10 current limitation (minimum values) current limitation is realized by increasing the resistance of the device which leads to rapid temperature rise inside. a temperature sensor for each channel causes an overheated channel to switch off to prevent destruction. after cooling down with thermal hysteresis, the channel switches on again. please refer to figure 11 for details. figure 11 shut down by over temperature with current limitation in short circuit condition, the load current is initially limited to i l(lim) . after thermal restart, the current limitation level is reduced to i l(scr) . the current limitation level is reset to i l(lim) by switching off the device ( v in = 0 v). i l current limit at ion. emf v ds 5 101520 5 10 15 20 25 in i l i is t i l(lim) i l(scr) t t overload . emf t off(sc)
smart high-side power switch bts 5234g data sheet 16 v1.0, 2004-01-23 4.2.2 reverse polarity protection in case of reverse polarity, the intrinsic body diode causes power dissipation. additional power is dissipated by the integrated ground resistor. use following formula for estimation of total power dissipation p diss(rev) in reverse polarity mode. the reverse current through the intrinsic body diode has to be limited by the connected load. the current through sense pins is1 and is2 has to be limited (please refer to maximum ratings on page 8 ). the current through the ground pin (gnd) is limited internally by r gnd . the over-temperature protection is not active during reverse polarity. 4.2.3 over volt age protection in addition to the output clamp for inductive loads as described in section 4.1.3 , there is a clamp mechanism for over voltage protection. because of the integrated ground resistor, over voltage protection does not require external components. as shown in figure 12 , in case of supply voltages greater than v bb(az) , the power transistor switches on and the voltage across logic part is clamped. as a result, the internal ground potential rises to v bb - v bb(az) . due to the esd zener diodes, the potential at pin in1, in2 and sen rises almost to that potential, depending on the impedance of the connected circuitry. figure 12 over voltage protection 4.2.4 loss of ground protection in case of complete loss of the device ground connections, but connected load ground, the bts 5234g securely changes to or keeps in off state. p diss(rev) v ds(rev) i l ? () all channels v bb 2 r gnd -------------- - + = out vbb overvolt age . emf v out r gnd logic gnd in is sen r sen r in zd esd zd az internal ground
smart high-side power switch bts 5234g data sheet 17 v1.0, 2004-01-23 4.2.5 electrical ch aracteristics unless otherwise specified: v bb = 9 v to 16 v, t j = -40 c to +150 c , typical values: v bb = 13.5 v, t j = 25 c pos. parameter symbol limit values unit test conditions min. typ. max. over load protection 4.2.1 load current limitation i l (lim) 23 42 a v ds = 7 v 14 28 a v ds = 14 v 4.2.2 repetitive short circuit current limitation i l(scr) 6a t j = t j(sc) 1) 1) not subject to production test, specified by design 4.2.3 initial short circuit shut down time t off(sc) 0.54 ms t jstart = 25 c 1) 4.2.4 thermal shut down temperature t j(sc) 150 170 1) c - 4.2.5 thermal hysteresis ? t j 7k- 1) reverse battery 4.2.6 drain-source diode voltage (v out >v bb ) -v ds(rev) 900 mv i l = -3.5 a v bb = -13.5 v t j = 150c 4.2.7 reverse current through gnd pin - i gnd 65 ma v bb = -13.5 v 1) ground circuit 4.2.8 integrated resistor in gnd line r gnd 115 220 350 ? over voltage 4.2.9 over voltage protection v bb(az) 41 47 53 v i bb = 2 ma loss of gnd 4.2.10 output leakage current while gnd disconnected i l(gnd) 1ma i in = 0, i sen = 0 , i is = 0, i gnd = 0 1) 2) 2) no connection at these pins
smart high-side power switch bts 5234g data sheet 18 v1.0, 2004-01-23 4.3 diagnosis for diagnosis purpose, the bts 5234g provides an enhanced intellisense signal at pins is1 and is2. this means in detail, the current sense signal i is , a proportional signal to the load current (ratio k ilis = i l / i is ), is provided in on-state as long as no failure mode occurs. in case of open load in off-state, the voltage v is(fault) is fed to the diagnosis pin. figure 13 block diagram: diagnosis table 1 truth table operation mode input level output level diagnostic output sen = h sen = l normal operation (off) l z z z short circuit to gnd z z z over temperature z z z short circuit to v bb v bb v is = v is(fault) z open load < v out(ol) > v out(ol) z v is = v is(fault) z z channel 1 channel 2 gate control i is2 out2 i is1 out1 sen is1 c in1 v out(ol) 0 1 0 1 0 1 v is(fa u lt) r in1 r sen gate control in2 is2 0 1 r in2 diagnosis gnd r ol s ol load vbb sense.emf r is1 r is2 r lim r lim
smart high-side power switch bts 5234g data sheet 19 v1.0, 2004-01-23 4.3.1 on-state diagnosis the standard diagnosis signal is a current sense signal proportional to the load current. the accuracy of the ratio ( k ilis = i l / i is ) depends on the temperature. please refer to following figure 14 for details. usually a resistor r is is connected to the current sense pin. it is recommended to use sense resistors r is > 500 ?. a typical value is 4.7 k ? . figure 14 current sense ratio k ilis 1) normal operation (on) h ~ v bb i is = i l / k ilis z current limitation < v bb zz short circuit to gnd << v bb zz over temperature z z z short circuit to v bb v bb i is < i l / k ilis z open load ~v bb zz l = low level, h = high level, z = high impedance, potentia l depends on leakage currents and external circuit 1) the curves show the behavior based on characterization data. the marked points are guaranteed in this data sheet in section 4.3.4 (position 4.3.6 ). table 1 truth table operation mode input level output level diagnostic output sen = h sen = l 1000 2000 3000 4000 5000 6000 7000 8000 0 0.5 1 1.5 2 2.5 3 3.5 4 k ilis i l /a dummy t j = 150 c dummy t j = -40 c
smart high-side power switch bts 5234g data sheet 20 v1.0, 2004-01-23 in case of over current as well as over temperature, the current sense signal is switched off. as a result, one threshold is enough to distinguish between normal and faulty operation. open load and over load can be differentiated by switching off the channel and using open load detection in off-state. details about timings between the diagnosis signal i is and the output voltage v out and load current i l in on-state can be found in figure 15 . figure 15 timing of diagnosis signal in on-state 4.3.2 off-state diagnosis details about timings between the diagnosis signal i is and the output voltage v out and load current i l in off-state can be found in figure 16 . figure 16 timing of diagnosis signal in off-state switchon.emf in v out i is t t t i l t on t on t sis( o n) t sis( l c) off switchoff.emf in v out i is t t t i l t t off open load v is( fa u lt) / r s on off t d(fault) t s( fa u lt)
smart high-side power switch bts 5234g data sheet 21 v1.0, 2004-01-23 for open load diagnosis in off state an external output pull-up resistor ( r ol ) is recommended. for calculation of the pull-up resistor, just the external leakage current i leakage and the open load threshold voltage v out(ol) has to be taken into account. i leakage defines the leakage current in the complete system e.g. caused by humidity. there is no internal leakage current from out to ground at bts 5234g. v bb(min) is the minimum supply voltage at which the open load diagnosis in off state must be ensured. to reduce the stand-by current of th e system, an open load resistor switch ( s ol ) is recommended. 4.3.3 sense enable function the diagnosis signals have to be switched on by a high signal at sense enable pin (sen). see figure 17 for details on the timing between sen pin and diagnosis signal i is . please note that the diagnosis is disabled, when no signal is provided at pin sen. figure 17 timing of sense enable signal the sen pin circuit is designed equal to the input pin. please refer to figure 5 for details. the resistors r lim are recommended to limit the current through the sense pins is1 and is2 in case of reverse polarity and over voltage. please refer to maximum ratings on page 8 . the stand-by current of the bts 5234g is minimized, when both input pins (in1 and in2) and the sense enable pin (sen) are on low level. r ol v bb(min) v out(ol,max) ? i leakage ----------------------------------------------------------- = t d is( sen) t sis( sen) t sen.emf t sis( sen) t t d is( sen) i is sen
smart high-side power switch bts 5234g data sheet 22 v1.0, 2004-01-23 4.3.4 electrical characteristics unless otherwise specified: v bb = 9 v to 16 v, t j = -40 c to +150 c, v sen = 5 v, typical values: v bb = 13.5 v, t j = 25 c pos. parameter symbol limit values unit test conditions min. typ. max. open load at off-state 4.3.1 open load detection threshold voltage v out(ol) 1.6 2.8 4.4 v 4.3.2 sense signal in case of open load v is(fault) 3.5 6.5 v v in = 0 v v out = v bb i is = 1 ma 4.3.3 sense signal current limitation i is(lim) 2ma v in = 0 v v out = v bb 4.3.4 sense signal invalid after negative input slope t d(fault) 1.2 ms v in = 5v to 0v v out = v bb 4.3.5 fault signal settling time t s(fault) 200 s v in = 0 v v out = 0 v to > v out(ol) i is = 1 ma load current sense on-state 4.3.6 current sense ratio k ilis v in = 5 v i l = 40 ma i l = 1.3 a i l = 2.2 a i l = 4.0 a 1000 2300 2410 2465 4035 3050 2920 2850 8000 3580 3380 3275 t j = -40 c i l = 40 ma i l = 1.3 a i l = 2.2 a i l = 4.0 a 1400 2465 2520 2580 3410 2920 2875 2870 6000 3275 3220 3160 t j = 150 c 4.3.7 current sense voltage limitation v is(lim) 5.0 6.2 7.5 v i is = 0.5 ma i l = 3.5 a 4.3.8 current sense leakage/offset current i is(lh) 5a v in = 5 v i l = 0 a
smart high-side power switch bts 5234g data sheet 23 v1.0, 2004-01-23 4.3.9 current sense leakage, while diagnosis disabled i is(dis) 2a v sen = 0 v i l = 3.5 a 4.3.10 current sense settling time to i is static 10% after positive input slope t sis(on) 300 s v in = 0v to 5v i l = 3.5 a 1) 4.3.11 current sense settling time to i is static 10% after change of load current t sis(lc) 50 s v in = 5 v i l = 1.3 a to 2.2 a 1) sense enable 4.3.12 input resistance r sen 1.8 3.5 5.5 k ? 4.3.13 l-input level v sen(l) -0.3 1.0 v 4.3.14 h-input level v sen(h) 2.5 5.7 v 4.3.15 l-input current i sen(l) 31875a v sen = 0.4 v 4.3.16 h-input current i sen(h) 10 38 75 a v sen = 5 v 4.3.17 current sense settling time t sis(sen) 325s v sen = 0v to 5v v in = 0 v v out > v out(ol) 4.3.18 current sense deactivation time t dis(sen) 25 s v sen = 5v to 0v i l = 3.5 a r s = 5 k ? 1) 1) not subject to production test, specified by design unless otherwise specified: v bb = 9 v to 16 v, t j = -40 c to +150 c, v sen = 5 v, typical values: v bb = 13.5 v, t j = 25 c pos. parameter symbol limit values unit test conditions min. typ. max.
smart high-side power switch bts 5234g package outlines bts 5234g data sheet 24 v1.0, 2004-01-23 5 package outlines bts 5234g 110 11 20 index marking 1) does not include plastic or metal protrusions of 0.15 max per side 2) does not include dambar protrusion of 0.05 max per side gps05094 2.65 max 0.1 0.2 -0.1 2.45 -0.2 +0.15 0.35 1.27 2) 0.2 24x -0.2 7.6 1) 0.35 x 45? 0.23 8? max +0.09 +0.8 0.3 10.3 0.4 12.8 -0.2 1) p-dso-20-21 (plastic dual small outline package) you can find all of our packages, sorts of packing and others in our infineon internet page ?products?: http://www.infineon.com/products. dimensions in mm smd = surface mounted device
smart high-side power switch bts 5234g revision history data sheet 25 2004-01-23 6 revision history version date changes v1.0 04-01-23 initial version
smart high-side power switch bts 5234g revision history data sheet 26 v1.0, 2004-01-23
edition 2004-01-23 published by infineon technologies ag, st.-martin-strasse 53, d-81541 mnchen, germany ? infineon technologies ag 1/31/04. all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as warranted characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office in germany or our infineon technologies re presentatives worldwide. warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your neare st infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safe ty or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. smart high-side power switch bts 5234g data sheet 27 2004-01-23
http://www.infineon.com published by infineon technologies ag

▲Up To Search▲

Price & Availability of BTS5234G

	To Download BTS5234G Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .